G30N60C3D High Power UltraFast IGBT with Anti-Parallel Diode
60A @ 25°C
30A @ 110°C
600V
Internal Reference:
G30N60C3D.TO247
G30N60C3D High Power UltraFast IGBT with Anti-Parallel Diode (60 Amperes 600 Volts - TO-247 / TO-3P)
Product Description
The G30N60C3D (also designated as HGTG30N60C3D) is a high-voltage, high-current UltraFast N-Channel Insulated Gate Bipolar Transistor (IGBT) co-packaged with an ultra-fast soft-recovery anti-parallel free-wheeling diode. Engineered for high-frequency hard-switching power converters, it combines low conduction losses with rapid switching dynamics.
Capable of handling continuous collector currents up to 60 Amperes at 25 degrees Celsius case temperature (30 Amperes at 110 degrees Celsius) and blocking peak reverse off-state voltages up to 600 Volts, it is housed in a rugged TO-247 (TO-3P) through-hole package. Its integrated anti-parallel diode simplifies circuit design and eliminates the need for an external diode in inductive load switching systems. It is widely used in high-power switched-mode power supplies (SMPS), DC-to-AC inverters, uninterruptible power supplies (UPS), motor controllers, and induction heating equipment.
Key Features
- UltraFast Switching Performance: Low switching energy loss optimized for high-frequency operation up to 50 kilohertz.
- Co-Packaged Anti-Parallel Diode: Includes an integrated ultra-fast soft-recovery diode to protect against reverse inductive voltage spikes and reduce electromagnetic interference.
- Low Saturation Voltage: Low collector-to-emitter saturation voltage (typically 1.8 Volts) minimizes power dissipation during full-conduction cycles.
- High Surge Capability: Pulsed collector current rating up to 220 Amperes protects against high startup and transient load spikes.
- MOS-Gated Drive Simplicity: High input impedance allows straightforward drive control via standard voltage-level gate driver circuits.
- Heavy-Duty TO-247 Package: Exceptional heat dissipation capacity for mounting onto high-performance aluminum cooling assemblies.
Product Specifications
- Model: G30N60C3D
- Product Type: N-Channel UltraFast IGBT with Anti-Parallel Diode
- Collector-to-Emitter Breakdown Voltage: 600 Volts
- Continuous Collector Current: 60 Amperes (at case temperature of 25 degrees Celsius) / 30 Amperes (at case temperature of 110 degrees Celsius)
- Pulsed Collector Current: 220 Amperes
- Collector-to-Emitter Saturation Voltage: 1.8 Volts typical, 2.2 Volts maximum (at 30 Amperes collector current and 15 Volts gate-to-emitter voltage)
- Gate-to-Emitter Threshold Voltage: 3.0 Volts to 6.0 Volts
- Gate-to-Emitter Voltage Range: plus or minus 20 Volts maximum
- Diode Forward Voltage Drop: 1.8 Volts typical, 2.2 Volts maximum
- Turn-On Delay Time: 20 nanoseconds typical
- Turn-Off Delay Time: 130 nanoseconds typical
- Maximum Power Dissipation: 208 Watts (at case temperature of 25 degrees Celsius)
- Operating Junction Temperature Range: minus 55 degrees Celsius to plus 150 degrees Celsius
- Package Type: TO-247 / TO-247AC (Through-Hole)