IXGX120N60B HiPerFAST IGBT

https://www.ram-e-shop.com/web/image/product.template/5956/image_1920?unique=9aa5274 IXGX120N60B

200A @ 25°C
120A @ 100°C
600V

165.00 EGP 165.0 EGP 165.00 EGP

165.00 EGP

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مرجع داخلي: IXGX120N60B

IXGX120N60B High Power GenX3 Field Stop IGBT (120 Amperes 600 Volts)

Product Description

The IXGX120N60B is a high-current, high-voltage GenX3 Field Stop Insulated Gate Bipolar Transistor (IGBT) engineered by IXYS (now Littelfuse) for heavy-duty industrial power switching applications. Featuring a continuous collector current rating of 120 Amperes and a collector-to-emitter breakdown voltage rating of 600 Volts, it provides high power density, low conduction losses, and fast switching performance.

Housed in the extra-large PLUS247 (TO-247 style) through-hole package, the IXGX120N60B features an hole-less tab design that reduces thermal resistance and improves mechanical isolation reliability under high vibration. It is widely used in high-power motor drives, uninterruptible power supplies (UPS), solar string inverters, industrial welding equipment, power factor correction (PFC) circuits, and DC-to-AC power converters.

Key Features

  • Ultra-High Current Capability: Handles continuous collector currents up to 120 Amperes at 100 degrees Celsius case temperature (up to 200 Amperes at 25 degrees Celsius).
  • GenX3 Field Stop Technology: Advanced silicon design provides low collector-to-emitter saturation voltage and low gate charge for reduced switching and conduction losses.
  • Low Conduction Voltage: Low collector-to-emitter saturation voltage (typically 1.4 Volts to 1.8 Volts) minimizes power dissipation during continuous operation.
  • PLUS247 Package: Industry-standard footprint compatible with TO-247 mounting, featuring an hole-less clip-mount tab for superior thermal contact and reduced stress.
  • High Surge Capacity: Pulsed collector current rating up to 360 Amperes protects against heavy transient startup loads.

Product Specifications

  • Model: IXGX120N60B
  • Product Type: Insulated Gate Bipolar Transistor (IGBT)
  • Collector-to-Emitter Breakdown Voltage: 600 Volts
  • Continuous Collector Current: 200 Amperes (at case temperature of 25 degrees Celsius) / 120 Amperes (at case temperature of 100 degrees Celsius)
  • Pulsed Collector Current: 360 Amperes
  • Collector-to-Emitter Saturation Voltage: 1.4 Volts typical, 1.8 Volts maximum (at 100 Amperes collector current and 15 Volts gate-to-emitter voltage)
  • Gate-to-Emitter Threshold Voltage: 3.0 Volts to 5.0 Volts
  • Gate-to-Emitter Voltage Range: plus or minus 20 Volts maximum
  • Maximum Power Dissipation: 780 Watts (at case temperature of 25 degrees Celsius)
  • Operating Junction Temperature Range: minus 55 degrees Celsius to plus 150 degrees Celsius
  • Package Type: PLUS247 (Through-Hole Clip-Mount)

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