IXGH60N50 High Current MOS IGBT
75A @ 25°C
60A @ 90°C
500V
مرجع داخلي:
IXGH60N50
IXGH60N50 High Power IGBT (60 Amperes 500 Volts)
Product Description
The IXGH60N50 is a high-current, high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, engineered for robust power switching applications and high-efficiency power conversion systems. Featuring a continuous collector current rating of 60 Amperes and a collector-to-emitter breakdown voltage capability of 500 Volts, it delivers reliable high-power performance across demanding industrial environments.
Housed in a rugged TO-247AD through-hole package, the IXGH60N50 offers low on-state conduction losses and optimized switching dynamics. It is widely utilized in high-power motor drives, uninterruptible power supplies (UPS), switched-mode power supplies (SMPS), welding equipment, and DC-to-AC power inverters.
Key Features
- High Current Handling: Continuous collector current capacity of 60 Amperes at 90 degrees Celsius case temperature (up to 75 Amperes at 25 degrees Celsius).
- High Breakdown Voltage: Collector-to-emitter voltage rated at 500 Volts.
- Low Conduction Voltage: Low collector-to-emitter saturation voltage (typically 2.1 Volts) minimizes power dissipation during continuous conduction.
- High Peak Current Capability: Pulsed collector current rating up to 200 Amperes handles high transient surge loads.
- Standard TO-247AD Package: High thermal transfer capacity for seamless mounting to external aluminum heat sinks.
Product Specifications
- Model: IXGH60N50
- Product Type: Insulated Gate Bipolar Transistor (IGBT)
- Collector-to-Emitter Breakdown Voltage: 500 Volts
- Continuous Collector Current: 75 Amperes (at case temperature of 25 degrees Celsius) / 60 Amperes (at case temperature of 90 degrees Celsius)
- Pulsed Collector Current: 200 Amperes
- Collector-to-Emitter Saturation Voltage: 2.1 Volts typical, 2.5 Volts maximum (at 60 Amperes collector current and 15 Volts gate-to-emitter voltage)
- Gate-to-Emitter Threshold Voltage: 2.5 Volts to 5.0 Volts
- Gate-to-Emitter Voltage Range: plus or minus 20 Volts maximum
- Maximum Power Dissipation: 300 Watts (at case temperature of 25 degrees Celsius)
- Operating Junction Temperature Range: minus 55 degrees Celsius to plus 150 degrees Celsius
- Package Type: TO-247AD (Through-Hole)