G40N60UFD UltraFast Field Stop IGBT

G40N60UFD UltraFast Field Stop IGBT (80 Amperes 600 Volts - TO-3P / TO-247 Package)

Product Description

The G40N60UFD (commonly designated as FGH40N60UFD or SGP40N60UFD) is an ultra-fast N-Channel Field Stop Insulated Gate Bipolar Transistor (IGBT) co-packaged with an ultra-fast soft-recovery anti-parallel diode. Engineered for high-frequency hard-switching power converters, it delivers low conduction power losses combined with rapid switching dynamics.

Capable of handling continuous collector currents up to 80 Amperes at 25 degrees Celsius case temperature (40 Amperes at 100 degrees Celsius) and blocking peak off-state voltages up to 600 Volts, it is housed in a heavy-duty TO-3P (TO-247) through-hole package. The integrated co-packaged anti-parallel diode eliminates the need for an external free-wheeling diode, making it ideal for switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), motor controllers, solar inverters, and power factor correction (PFC) circuits.

Key Features

• UltraFast Switching Speed: Optimized for efficient operation at high switching frequencies up to 50 kilohertz.
• Integrated Anti-Parallel Diode: Co-packaged ultra-fast soft-recovery diode protects against reverse inductive voltage spikes and reduces electromagnetic interference.
• Low Saturation Voltage: Low collector-to-emitter saturation voltage (typically 1.8 Volts at 40 Amperes) minimizes conduction power dissipation.
• High Surge Capability: Pulsed collector current handling up to 120 Amperes protects against high startup and transient load conditions.
• Positive Temperature Coefficient: Saturation voltage features a positive temperature coefficient for easy parallel operation.
• Heavy-Duty TO-3P Package: Exceptional thermal conductivity for mounting onto high-performance aluminum cooling assemblies.

Product Specifications

• Model: G40N60UFD
• Product Type: N-Channel UltraFast Field Stop IGBT with Anti-Parallel Diode
• Collector-to-Emitter Breakdown Voltage: 600 Volts
• Continuous Collector Current: 80 Amperes (at case temperature of 25 degrees Celsius) / 40 Amperes (at case temperature of 100 degrees Celsius)
• Pulsed Collector Current: 120 Amperes
• Collector-to-Emitter Saturation Voltage: 1.8 Volts typical, 2.3 Volts maximum (at 40 Amperes collector current and 15 Volts gate-to-emitter voltage)
• Gate-to-Emitter Threshold Voltage: 3.5 Volts to 6.5 Volts
• Gate-to-Emitter Voltage Range: plus or minus 20 Volts maximum
• Diode Forward Voltage Drop: 1.7 Volts typical, 2.2 Volts maximum
• Turn-On Delay Time: 15 nanoseconds typical
• Turn-Off Delay Time: 85 nanoseconds typical
• Maximum Power Dissipation: 290 Watts (at case temperature of 25 degrees Celsius) / 116 Watts (at case temperature of 100 degrees Celsius)
• Operating Junction Temperature Range: minus 55 degrees Celsius to plus 150 degrees Celsius
• Package Type: TO-3P / TO-247 (Through-Hole)

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• ​Datasheet