G20N60B3D High Power UltraFast IGBT with Anti-Parallel Diode

G20N60B3D High Power UltraFast IGBT with Anti-Parallel Diode (40 Amperes 600 Volts - TO-3P / TO-247 Package)

Product Description

The G20N60B3D (commonly designated as HGTG20N60B3D) is a high-voltage, high-current UltraFast N-Channel Insulated Gate Bipolar Transistor (IGBT) co-packaged with an ultra-fast soft-recovery anti-parallel free-wheeling diode. Engineered for high-frequency power switching applications, it combines low conduction losses with rapid switching response speeds.

Capable of handling continuous collector currents up to 40 Amperes at 25 degrees Celsius case temperature (20 Amperes at 110 degrees Celsius) and blocking peak off-state voltages up to 600 Volts, it is housed in a heavy-duty TO-3P (TO-247) through-hole package. The integrated co-packaged anti-parallel diode eliminates the need for an external diode, simplifying design layout in inductive load switching systems. It is widely used in switched-mode power supplies (SMPS), DC-to-AC inverters, uninterruptible power supplies (UPS), motor controllers, and induction heating equipment.

Key Features

• UltraFast Switching Speed: Designed for efficient operation at high switching frequencies up to 50 kilohertz.
• Co-Packaged Anti-Parallel Diode: Integrated ultra-fast soft-recovery diode protects against reverse inductive voltage spikes and reduces electromagnetic interference.
• Low Saturation Voltage: Low collector-to-emitter saturation voltage (typically 1.7 Volts at 20 Amperes) minimizes power dissipation during full-conduction cycles.
• High Surge Capability: Pulsed collector current rating up to 120 Amperes protects against high startup and transient load conditions.
• High Input Impedance: MOS-gated structure allows straightforward voltage-controlled drive circuits.
• Heavy-Duty TO-3P Package: Exceptional heat dissipation capacity for mounting onto high-performance aluminum cooling assemblies.

Product Specifications

• Model: G20N60B3D
• Product Type: N-Channel UltraFast IGBT with Anti-Parallel Diode
• Collector-to-Emitter Breakdown Voltage: 600 Volts
• Continuous Collector Current: 40 Amperes (at case temperature of 25 degrees Celsius) / 20 Amperes (at case temperature of 110 degrees Celsius)
• Pulsed Collector Current: 120 Amperes
• Collector-to-Emitter Saturation Voltage: 1.7 Volts typical, 2.0 Volts maximum (at 20 Amperes collector current and 15 Volts gate-to-emitter voltage)
• Gate-to-Emitter Threshold Voltage: 3.0 Volts to 6.0 Volts
• Gate-to-Emitter Voltage Range: plus or minus 20 Volts maximum
• Diode Forward Voltage Drop: 1.7 Volts typical, 2.1 Volts maximum
• Turn-On Delay Time: 18 nanoseconds typical
• Turn-Off Delay Time: 115 nanoseconds typical
• Maximum Power Dissipation: 165 Watts (at case temperature of 25 degrees Celsius)
• Operating Junction Temperature Range: minus 55 degrees Celsius to plus 150 degrees Celsius
• Package Type: TO-3P / TO-247 (Through-Hole)

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