BD139
NPN Silicon Transistor General Purpose
مرجع داخلي:
BD139
Features
- Collector-Emitter Volt (Vceo): 80V
- Collector-Base Volt (Vcbo): 100V
- Collector Current (Ic): 1.5A
- hfe: 40-250 @ 150mA
- Power Dissipation (Ptot): 8W
- Type: NPN
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